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About 412 results for "bipolar transistor"

Patent Application Titled "Lateral Bipolar Junction Transistor...

By a News Reporter-Staff News Editor at Electronics Newsweekly -- According to news reporting originating from Washington, D.C., by VerticalNews journalists, a patent application by the inventor Liu, Qing (Irvine, CA), filed on September 7, 2016, ... 4 Traders, 4 days ago
Bipolar junction Transistor, 1 week ago

9 images for bipolar transistor

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Engineer Live, 3 months ago, 3 months ago
MyNewsDesk, 5 months ago
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Broadway World, 4 months ago
International Business Times, 6 months ago

INTERNATIONAL BUSINESS MACHINES : Patent Issued for Hybrid Bipolar Junction Transistor (USPTO 9508777)

By a News Reporter-Staff News Editor at Electronics Newsweekly -- According to news reporting originating from Alexandria, Virginia, by VerticalNews journalists, a patent by the inventors Afzali-Ardakani, Ali (Ossining, NY); Hekmatshoartabari, ...
 4 Traders1 month ago SAMSUNG ELECTRO MECHANICS : Patent Issued for Semiconductor Module Package and Method of Manufacturing the Same (USPTO 9524929)  4 Traders2 weeks ago Fuji Electric : Patent Issued for Power Supply Device (USPTO 9520789)  4 Traders3 weeks ago Patent Issued for Methods of Forming Conductive Jumper Traces (USPTO 9508635)  4 Traders1 month ago

0.30µm process targets ultra-low noise sensing apps

The A30 process features include isolated 3.3V devices, isolated 3.3V low Vt devices and vertical bipolar transistors. Ams AG has introduced A30, a high performance analog low noise CMOS process. According to the company, the A30 process ...
 EDN Asia1 month ago Analogue process suited for low noise sensing applications  Electronic Specifier1 month ago

CIRRUS LOGIC : Patent Issued for Resistance Measurement of a Resistor in a Bipolar Junction Transistor (BJT)-Based Power Stage (USPTO 9504118)

By a News Reporter-Staff News Editor at Electronics Newsweekly -- A patent by the inventors Agarwal, Shatam (Austin, TX); Singh, Rahul (Austin, TX), filed on February 17, 2015, was published online on November 22, 2016, according to news reporting ...
 4 Traders1 month ago

Imec demonstrates extremely high-speed heterojunction bipolar transistors

The extremely high-speed devices have a fully self-aligned architecture by self-alignment of the emitter, base and collector region, and implement an optimized collector doping profile. Compared to III-V HBT devices, SiGe:C HBTs combine high-density ...
 Electronic Specifier1 month ago
EDN Asia

Simple Audio Power Amplifier With NE5534/А And Darlington Transistors With Up To 30W Of Output Power

Comment errors or corrections found for this circuit, and get the chance to win big! You can find our comments section at the end of this page. Introduction These days there a lot of audio power amplifiers in integrated circuits (ICs). But it ...
 EFY2 weeks ago 3D solutions save energy in silicon power transistors  EDN Asia1 month ago 3D solutions aid silicon power transistors  Electronic Specifier1 month ago Tokyo Institute of Technology research: 3D solutions to energy savings in silicon power transistors  Nanotechnology News1 month ago

High Voltage Direct Current (HVDC) Transmission Systems Market to be Worth US$ 14.36 Bn by 2026

Key market players include ABB Ltd., TransGrid Solutions Inc., Siemens AG, Prysmian SpA, Toshiba Corporation, General Electric Co., Hitachi Ltd., Abengoa SA, and ATCO Electric Ltd. Valley Cottage, United States - January 11, 2017 ...
 Marketplace5 days ago

Silicon power transistors can be made more efficient, find researchers

While progress in energy efficiencies has been reported with alternative materials such as SiC and GaN, energy-savings in standard inexpensive and widely used silicon devices are still keenly sought, the team observes. K Tsutsui at Tokyo Institute ...
 EE Times Europe1 month ago Japanese researchers scale IGBT features for energy savings  EDN Europe1 month ago
Money Control

Chinese firm exports transistor chips for Indian locomotives

CRRC Zhuzhou Institute Co. Ltd, a state-run locomotive maker based in Zhuzhou City in central China's Hunan province, said that it exported eight-inch insulated gate bipolar transistor (IGBT) chips to India.
 Money Control2 months ago China exports eight-inch chips to India  Prokerala2 months ago
Microwave Product Digest

Keysight Technologies, UC San Diego Collaborate to Prove Viability of 5G Communication with Record-Setting Data Rates of 2 Gbps at 300 m, 4 Gbps at 100 m

(BUSINESS WIRE) -- --Highlights: --Uses UC San Diego transmit/receive phased-array chips with noise figure 6 dB --Has 42 dBm equivalent isotropic radiated power (EIRP) --Scans ±50 degrees with sidelobes -14 dB (32-element antenna) ...
 TradingCharts.com1 month ago KEYSIGHT TECHNOLOGIES : UC San Diego Collaborate to Prove Viability of 5G Communication with Record-Setting Data Rates of 2 Gbps at 300 m, 4 Gbps at 100 m more+  4 Traders1 month ago Keysight Technologies View From the Top  Microwave Product Digest3 weeks ago Keysight, UC San Diego Collaborate to Prove Viability of 5G with Record-Setting Data Rates  Telecom Engine1 month ago
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