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About 714 results for "bipolar transistor"

IGBT Gate Drive Targets Industrial Apps

Amantys announced the launch of a new Insulated Gate Bipolar Transistor (IGBT) Gate Driver operating at 3.3 kV, 4.5 kV and 6.5 kV, with significantly improved reliability and protection in high power modules targeting the most demanding ... Power Electronics News, 4 days ago
Reverse Conducting 650V IGBT Reduces Switching Losses by 30% Power Electronics News, 1 week ago
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10 images for bipolar transistor

Electronic Specifier, 2 weeks ago
Electronic Specifier, 2 weeks ago
mndcdn.com, 2 weeks ago
Electronic Design, 1 week ago
EDN Europe, 2 weeks ago
artwhere.net, 1 month ago
EDN Europe, 1 month ago
STMicroelectronics, 1 month ago
KXXV-TV, 1 month ago
circuitcellar.com, 1 month ago
Electronic Specifier

Bipolar transistors feature proven robustness to radiation

To demonstrate its technology'srobustness to radiation effect, ST offer the series of transistors with data from very-low-dose-rate (10mrad/s) tests. The bipolar transistors also come with up-screening, reducing additional cost and lead time. All ...
 Electronic Specifier2 weeks ago Best-in-Class Rad-Hard Devices from STMicroelectronics Boast Qualification for Use in US Projects  Noodls1 week ago Rad-hard BJTs from ST  Electronics Engineering Herald1 month ago Discrete transistors withstand realistic radiation doses and rates  EE Times Europe1 month ago
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Freescale Semiconductor Assigned Patent for Bipolar Transistors

F (Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., Aug. 4 -- Freescale Semiconductor, Austin, Texas, has been assigned a patent (8,791,546) developed by three co-inventors for "bipolar transistors having ...
 TMC Net4 weeks ago
Ferret.com.au

600V trench IGBTs for rugged system performance

ELEMENT14 has expanded its portfolio of 600V insulated-gate bipolar transistors (IGBTs) from International Rectifier. The International Rectifier trench IGBTs are optimised for a complete power range spectrum, and are suited for a wide range ...
 Electronics News Australia1 month ago element14 expands rugged 600V Trench IGBTs from International Rectifier  Cyber India Online1 month ago Expanded range of rugged 600V Trench IGBTs available for electronics design in Asia-Pacific  Ferret.com.au2 months ago Future Electronics Features Ultra-Fast 1200V IGBTs from International Rectifier  Virtual Strategy Magazine1 week ago
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Research and Markets: IGBT and Super Junction MOSFET Market 2013 - 2019

Globally, the combined market for IGBT (Insulated Gate Bipolar Transistor) and super junction MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) was valued at USD 4,776.2 million in 2012 and is likely to grow at a ...
 Morningstar.com3 days ago IGBT and Super Junction MOSFET Market 2013 - 2019  TMC Net3 days ago RESEARCH AND MARKETS : IGBT and Super Junction MOSFET Market 2013 - 2019  4 Traders3 days ago SiC Power Semiconductor Market Will Take Off in 2016, Firm Says  Tech-On!3 weeks ago
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Charged Electric Vehicle

Macronix : Patent Issued for High-Beta Bipolar Junction Transistor and Method of Manufacture

By a News Reporter-Staff News Editor at Journal of Engineering -- From Alexandria, Virginia , VerticalNews journalists report that a patent by the inventors Lin, Cheng-Chi (Yilan County, TW); Tu, Shuo-Lun (Hsin-Chu, TW); Lien, Shih-Chin (Taipei ...
 4 Traders3 weeks ago Patent Issued for Method of Fabricating a Super Junction Transistor  HispanicBusiness.com3 weeks ago Patent Issued for SiC Bipolar Junction Transistor with Overgrown Emitter  HispanicBusiness.com1 month ago ANPEC ELECTRONICS : "Method of Fabricating a Super Junction Transistor" in Patent Application Approval Process  4 Traders1 month ago
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Electronic Design

RS Bipolar power transistors target systems requiring affordable and efficient energy control

- Power [More Power Articles] Designed for use in low-voltage high-speed switching applications, where affordable efficient energy control is important, ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are now available from RS ...
 Electropages.com1 month ago IR introduces IR66xx series of 600V Trench-gate Field Stop IGBTs  Individual.com6 days ago Ultra-Fast 600-V Trench IGBTs Target Welding Apps  Electronic Design1 week ago 600V Ultra-fast Trench IGBTs Optimized for Welding Applications  Power Pulse.Net2 weeks ago
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Electronic Specifier

Bipolar transistors target automotive applications

Featuring a collector current of up to 3A and a peak collector current of up to 8A, the transistors provide power dissipation capabilities of 3W and low VCEsat values. This thermal and electrical performance is comparable to bipolar transistors in ...
 Electronic Specifier2 weeks ago

Diodes' (DIOD) CEO Keh-Shew Lu on Q2 2014 Results - Earnings Call Transcript

Operator Good afternoon, and welcome to Diodes Incorporated Second Quarter 2014 Financial Results Conference Call. At this time, all participants are in a listen-only mode. At the conclusion of today's conference call, instructions will be given ...
 Seeking Alpha3 weeks ago

Mitsubishi to launch 1200V power modules

Mitsubishi Electric Corporation has announced the launch of its 1,200V transfer-mold dual in-line package intelligent power module, or DIPIPM, Ver.6 and 1,200V Mini DIPIPM using sixth-generation IGBT chips featuring the carrier-stored trench-gate ...
 Individual.com1 month ago
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