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About 593 results for "bipolar transistor"

STMicroelectronics reveals Advanced Silicon-Carbide Power Devices
VAR India

ST targets Electric Vehicles with SiC power devices

Today's power modules typically rely on standard silicon diodes and Insulated Gate Bipolar Transistors (IGBTs). Silicon carbide is a newer, wide-bandgap technology that allows smaller device geometries capable of operating well above the 400V range ... EE Times Europe, 1 week ago

5 images for bipolar transistor

MyNewsDesk, 4 days ago
Power ElectronicTips, 1 week ago
TMC Net, 2 weeks ago
Yahoo! Singapore, 2 weeks ago
Charged Electric Vehicle, 1 month ago
Electronics Components World

DMOS FET arrays with 1.5A sink-outputs drive motors, LEDs

May 13, 2016 // By Graham Prophet They succeed the TD62064A and TD62308A series of bipolar transistor arrays that found wide use in applications including motors, relays and LED drives. TBD62xxxA series transistor arrays are ...
 EDN Europe2 weeks ago Toshiba Launches DMOS FET Transistor Arrays with Industry's First 1.5A Sink-Output Drive  Electronics Components World1 week ago Transistor arrays pack 1.5A sink-output driver  Electronic Engineering Times Asia1 week ago DMOS FET transistor arrays  Engineer Live6 days ago

Global Insulated Gate Bipolar Transistor (IGBT) Consumption 2016 Market Research Report

ReportBazzar has included a new report titled Global Insulated Gate Bipolar Transistor (IGBT) Consumption 2016 Market Research Report to their offerings. Browse Report Summary with TOC @ ...
 MyNewsDesk5 days ago Digi-Key Insulated gate bipolar transistor trench designed specifically for TIG welding machines  Electropages.com2 weeks ago Global and Chinese Insulated Gate Bipolar Transistor (IGBT) Industry - 2016  Research and Markets1 month ago Insulated Gate Bipolar Transistors: Global Markets  TMC Net1 month ago

Hvdc Extruded Cables Prospectives And Challenges

Some of HVDC lines in India are the Rihand-Delhi HVDC bipolar 500 kV DC transmission link, having rated capacity of 1500 MW is of length 814 km; Chandrapur-Padghe bipolar line of transmission is of length 753 kms with capacity 1500 MW at 500 kV; ...
 Electrical India1 month ago
Charged Electric Vehicle

Toshiba launches new opto-isolated IGBT gate pre-driver IC for inverters

Toshiba's new TB9150FNG, an opto-isolated Insulated Gate Bipolar Transistor (IGBT) gate pre-driver IC, features various enhanced protective functions for the inverters of electric and hybrid vehicles. As the control and drive functions of an ...
 EnvironmentGuru.com1 month ago Toshiba Adds to Line-up of DMOS FET Transistor Arrays with 1.5A Sink-Output Driver  Bloomberg2 months ago Toshiba Adds to Line up of DMOS FET Transistor Arrays with 1 5A Sink Output Driver  India Online.in2 months ago DMOS FET Arrays feature 1.5 A sink-output driver.  ThomasNet1 week ago
Power ElectronicTips

Littelfuse demonstrates SiC and IGBT roadmap

The IGBTs combine MOSFET gate drive with high current and low saturation voltage switching capability of bipolar transistors, for high efficiency and fast switching, says the company. Covering 600, 1,200 and 1,700V, the WB series, D series and S ...
 Electronic Specifier6 days ago 1.2-kV IGBTs boast super-low switching losses  Power ElectronicTips1 week ago ON Semiconductor further extends IGBT offerings with Ultra Field Stop trench technology  Design World Online1 week ago ON Semiconductor New 1200V IGBTs set power-efficiency benchmarks high-power switching systems  Electropages.com2 weeks ago

Demand of EV/HEV's driving the market of IGBT and Super Junction MOSFET in Asia Pacific Region

Insulated gate bipolar transistors (IGBTs) and super junction metal oxide field effect transistors (MOSFETs) are widely used as switches in a variety of power electronics systems, including wind turbines, uninterrupted power supplies (UPS), rail ...
 Low Carbon Economy1 month ago IGBT and Super Junction MOSFET Market - Increasing Demand for Consumer Electronic Products Boost This Market  Digital Journal1 month ago "Demand of EV/HEV's driving the market of IGBT and Super Junction MOSFET in Asia Pacific Region"  Press Release Ping1 month ago

Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor

Based on the construction of the 8-inch fabricat ion line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor(DMOS+) insulated-gate bipolar transistor(IGBT) technology ...
 Wap Cnki.net2 weeks ago

MEDIATEK : Patent Issued for Lateral Bipolar Junction Transistor (USPTO 9324705)

By a News Reporter-Staff News Editor at Electronics Newsweekly -- A patent by the inventors Ko, Ching-Chung (Hsinchu County, TW); Lee, Tung-Hsing (New Taipei, TW), filed on January 22, 2014, was published online on April 26, 2016, according to news ...
 4 Traders3 weeks ago Patent Issued for Bipolar Transistor (USPTO 9293569)  4 Traders1 month ago "Symmetrical Lateral Bipolar Junction Transistor and Use of Same in Characterizing and Protecting Transistors" in Patent Application Approval Process...  Equities.com2 months ago

Diodes' (DIOD) CEO Keh-Shew Lu on Q1 2016 Results - Earnings Call Transcript

Diodes Incorporated (NASDAQ: DIOD ) Q1 2016 Earnings Conference Call May 05, 2016 05:00 PM ET Executives Leanne Sievers - IR Keh-Shew Lu - President and CEO Rick White - CFO Mark King - SVP of Sales and Marketing Analysts ...
 Seeking Alpha3 weeks ago IDEAL POWER : Reports First Quarter 2016 Financial Results  4 Traders2 weeks ago Ideal Power Reports First Quarter 2016 Financial Results  Financial Buzz2 weeks ago Ideal Power reports semiconductor fabricator successfully tested its B-TRAN technology  PV Magazine1 month ago
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