New portfolio of automotive-qualified transistors offers DPAK-like thermal and electrical performance on just half the footprint Eindhoven, Netherlands and Hamburg, Germany (PRWEB) - NXP Semiconductors N.V. (NASDAQ: NXPI), today introduced the ... Electronics Web, 2 weeks ago
NXP Semiconductors introduces new LFPAK56 bipolar transistors - Individual.com, 2 weeks ago
Power SO-8 package cuts PCB area for 60/100V bipolar transistors - EDN Europe, 2 weeks ago
An analog DC/DC step-down controller from Texas Instruments introduced has remote bipolar junction transistor (BJT) temperature-compensated inductor current sensing that minimizes total solution footprint in high-power POL conversion. The 20-V ...Power Electronics News, 1 month ago DC/DC converters ideal for powering IGBT drivers ECN, 2 weeks ago High-Isolation DC-DCs Can Replace Two Converters In IGBT Systems Electronic Design, 2 weeks ago
Steady Growth in the Semiconductor Industry to Drive the Market for Bipolar Digital ICs, According to a New Trend Report Published by Global Industry Analysts, Inc.
The primary components of Bipolar Digital ICs are metal-oxide-semiconductors (MOSs) or bipolar transistors. Bipolar digital ICs are generally built on transistor-transistor logic (TTL) or emitter-coupled logic (ECL). Strong demand for electronic ...Digital Journal, 1 month ago
By a News Reporter-Staff News Editor at Electronics Newsweekly -- A patent application by the inventors Toner, Brendan (Kuching, MY); Cao, Xuezhou ( Plymouth , GB); Fang, Fred (Kuching, MY); Tan, Chuan Chien (Kuching, MY), filed on October 15, 2013 ...4 Traders, 1 week ago Patent Issued for Method for Transmitting a Binary Signal via a Transformer 4 Traders, 3 days ago Patent Issued for Bipolar Multistate Nonvolatile Memory HispanicBusiness.com, 3 days ago Intermolecular Inc : Patent Issued for Bipolar Multistate Nonvolatile Memory 4 Traders, 3 days ago
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28 February 2014 A 1400V Trench Insulated Gate Bipolar Transistor (IGBT), optimised for soft switching applications, has been launched by International Rectifier. Co-packaged with an ultra-low forward voltage diode, the IRG7PK35UD1PbF ...New Electronics, 1 week ago IR Introduces a Rugged, Reliable Ultra-fast 1400V IGBT Optimized for Induction Heating and Soft Switching Applications Electronics Components World, 4 days ago Ultra-fast 1400V IGBT Optimized for Induction Heating and Soft Switching Power Pulse.Net, 1 week ago Rapid Charge Controller Targets China with Mediatek Pump Express Power Pulse.Net, 1 week ago
With benefits such as high switching speeds with low on-resistance and, unlike the bipolar transistors that preceded it, no possibility of thermal runaway, the silicon power MOSFET is the obvious choice in many applications. Advances in ...ElectronicsOnline, 3 weeks ago
Ams has posted detail of a series of high precision LED controllers with PWM input for driving external bipolar transistors in LED backlight panels, also optimised for 2D and 3D operation in TV applications. AS3834/3834B are 4 channel devices with ...EE Times Europe, 1 month ago
Diodes Incorporated (Nasdaq:DIOD), a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic and analog semiconductor markets, today introduced the industry's first ...EFYTimes.com, 1 month ago
- Semiconductors [More Semiconductors Articles] Now available from RS Components, the new Xetex ZXT12N50DXTA dual 50V npn bipolar transistor is a 4th-generation ultra low-saturation device that utilises a proprietary Zetex matrix structure ...Electropages.com, 2 days ago
25th February 2014 Silicon germanium has been demonstrated at 798GHz f max , exceeding the previous speed record for SiGe chips by around 200GHz, according to Georgia Tech, which was testing a transistor made by German lab IHP. This operating ...Electronic Weekly, 1 week ago Silicon-Germanium Chip Sets New Speed Record Innovations Report, 2 weeks ago Silicon-germanium chip breaks speed record Electronic Products, 2 weeks ago SiGe chip sets new speed record-Feb 19, 2014 Compound Semiconductor Magazine, 2 weeks ago
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