About 356 results for "bipolar transistor"

International Business Machines Assigned Patent for Silicon Ge...

(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., June 10 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,455,322) developed by Oleg Gluschenkov, Poughkeepsie, N.Y., ... TMC Net, 1 week ago

52 images for bipolar transistor
ECN, 1 week ago	Power Pulse.Net, 1 week ago	Scribd, 1 week ago	Scribd, 2 weeks ago	Scribd, 3 weeks ago
Scribd, 1 month ago	Power Electronics News, 2 months ago	EDN Europe, 2 months ago	EETimes Europe, 2 months ago	Scribd, 1 month ago

52 images for bipolar transistor

left

right

IRG7PH37K10D

ECN, 1 week ago

Taiwan Semiconductor Manufacturing Assigned Patent for CMOS Image Sensors Formed of Logic Bipolar Transistors

(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., June 4 -- Taiwan Semiconductor Manufacturing, Hsin-Chu, Taiwan, has been assigned a patent (8,450,672) developed by Shine Chung, San Jose, Calif., Tao-Wen ...

TMC Net, 2 weeks ago National Semiconductor Assigned Patent TMC Net, 1 week ago Patent Issued for Voltage-Controlled Oscillator and Radar Sy. . . Equities.com, 4 weeks ago Patent Issued for Low-Leakage Diodes and Methods of Forming . . . Equities.com, 4 weeks ago

Dataweek

Tokyo Electron Device Releases an Expanded Lineup of IGBT Gate Drivers, Including Drive Boards, with an on-Board Optical Fiber Interface

Tokyo Electron Device Limited (TED) has announced the launch of the newly developed IGBT (Insulated Gate Bipolar Transistor) gate driver TD-BD-IGFB05K with an on-board optical fiber interface that enables control of 1700V/1200A class IGBTs on a ...

Individual.com, 1 month ago Tokyo Electron Device Bolsters Lineup of IGBT Gate Drivers Individual.com, 1 month ago Photocouplers drive and protect IGBTs Dataweek, 2 months ago Tokyo Electron Device Announces an Expanded Lineup of IGBT Gate Dri... Power Engineering, 2 months ago

More from: StockHouse USA, CNBC...and 32 other sources

[x]

Power Electronics News

Insulated Gate Bipolar Transistors offer high-speed switching.

May 23, 2013 - Available in 1,200 and 1,350 V versions with current ratings of 20, 30, and 40 A, Field Stop II NGTBxxN120IHRWG and NGTBxxN135IHRW are suitable for induction heating and soft switching applications operating at medium frequencies of ...

ThomasNet, 3 weeks ago Optoisolation for intelligent power modules EDN.com, 4 weeks ago Rugged, Reliable 600V Trench Ultrafast IGBTs Power Electronics News, 2 months ago

EE Times Europe

IGBT gate drivers feature on-board optical fibre interface for large-scale plants

The TD-BD-IGFB05K IGBT (Insulated Gate Bipolar Transistor) gate driver released by Tokyo Electron Device (TED) features an on-board optical fibre interface that enables control of 1700V/1200A class IGBTs on a single board. As plants for solar power ...

EE Times Europe, 2 months ago

1.2kV IGBTs aimed at motor drive, UPS systems

International Rectifier (IR) has announced a series of rugged 1.2kV ultra-fast insulated-gate bipolar transistors (IGBTs) optimised for industrial motor drive and UPS systems. According to the company, the devices leverage IR's field stop trench ...

EDN Asia, 1 day ago 1.2kV IGBTs for industrial motor drive, UPS systems EDN Asia, 1 week ago 1.2kV IGBTs target motor drive, UPS systems EE Times India, 2 days ago IR rolls 1200V IGBTs for motor drives, UPS apps Electronic Engineering Times Asia, 2 days ago

Photoinduced sign change of the magnetoresistance in field-effect transistors based on a bipolar molecular glass

The application of a novel bipolar molecular glass in field-effect transistors leads to devices with photoinduced magnetoresistance (MR) sign change. In darkness a low external magnetic field increases the resistance (positive MR up to +0.1%), while ...

RSC, 1 month ago

Patent Issued for Thin-Film Semiconductor Device, Lateral Bi. . .

Patent Issued for Thin-Film Semiconductor Device, Lateral Bipolar Thin-Film Transistor, Hybrid Thin-Film Transistor, MOS Thin-Film Transistor, and... Sharp Kabushiki KaishaNewsRx.com Patent Issued for Thin-Film Semiconductor Device, Lateral Bipolar ...

Equities.com, 2 months ago

EETimes Europe

Mini dual-inline-package intelligent power modules target industrial applications

Mitsubishi Electric has announced a new series of transfer-mold-type, mini dual-inline-package intelligent power modules (DIPIPM) primarily for inverter drive systems of small-capacity motors, servos and other industrial equipment. The modules ...

EETimes Europe, 2 months ago

ECN

Melexis Introduces Enhanced LIN Communication Devices with Integrated Voltage Regulation and Watchdog Functionality

-- Melexis today announced its MLX80031 and MLX80051 LIN transceivers in compact QFN5x5 packages to enable the development of LIN slaves in a simple and highly efficient manner. These ICs combine a physical layer LIN transceiver (according to LIN ...

Analog and DSP, 1 month ago Melexis announces new LIN communication devices TMC Net, 1 week ago LIN Devices integrate voltage regulation, watchdog. ThomasNet, 3 weeks ago LIN communication devices include integrated voltage regulation & watchdog functionality ECN, 1 month ago

Prev | Next