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About 439 results for "bipolar transistor"

Trench PT and FS IGBT Platform

Vishay Intertechnology, Inc. introduced its Trench IGBT (Insulated Gate Bipolar Transistor) platformfeaturing Punch Through (PT) and Field Stop (FS) technologies. Designed to increase efficiency in motor drives, UPS, solar inverters, and welding ... Power Electronics News, 2 weeks ago

2 images for "bipolar transistor"

Power Electronics News, 4 weeks ago
Electronics Engineering Herald, 2 months ago
Electronics Engineering Herald

Patent Application Titled "Insulated Gate Bipolar Transistor with High Emitter Gate Capacitance" Published Online

By a News Reporter-Staff News Editor at Electronics Newsweekly -- According to news reporting originating from Washington, D.C. , by VerticalNews journalists, a patent application by the inventor von Arx , Christoph (Olten, CH), filed on October 15, ...
 4 Traders1 month ago Patent Application Titled "Transistor Having Graphene Base" Published Online  4 Traders1 month ago Source Guide: Discrete Semiconductors 2015  Electronic Products1 month ago Electric circuit compensates for thermal distortion in HBT transistor  Electronics Engineering Herald2 months ago
Electronics Components World

New LinkSwitch-4 Switcher ICs from Power Integrations Pass US DoE-6 and European CoC Efficiency Rules

Adaptive base and emitter switched drive technology enables safe use of low-cost bipolar junction transistor switches Power Integrations (Nasdaq: POWI), a leader in high-voltage integrated circuits for energy-efficient power conversion, today ...
 Electronics Components World1 month ago POWER INTEGRATIONS : New LinkSwitch-4 Switcher ICs from Power Integrations Pass US DoE-6 and European CoC Efficiency Rules  4 Traders1 month ago Image Gallery: Top Discrete Power Semiconductors Q1-Q2 2013  Power Electronics News4 weeks ago 650V / 300A Modules designed for EV/HEV inverters  Power Pulse.Net1 month ago
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United Microelectronics : Patent Issued for Lateral Bipolar Junction Transistor and Fabrication Method

By a News Reporter-Staff News Editor at Electronics Newsweekly -- United Microelectronics Corp. (Hsinchu, TW) has been issued patent number 8981521, according to news reporting originating out of Alexandria, Virginia , by VerticalNews editors. ...
 4 Traders3 days ago United Microelectronics : Patent Application Titled "Lateral Bipolar Junction Transistor and Fabrication Method Thereof" Published Online  4 Traders2 weeks ago BUSINESS MACHINES : Patent Issued for Lateral Bipolar Transistors Having Partially-Depleted Intrinsic Base  4 Traders3 weeks ago PIXART IMAGING : "Bipolar Junction Transistor Pixel Circuit, Driving Method Thereof, and Image Sensor" in Patent Application Approval Process  4 Traders1 month ago

Researchers Submit Patent Application, "Heterojunction Bipolar Transistors with Reduced Parasitic Capacitance", for Approval

By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Washington, D.C. , VerticalNews journalists report that a patent application by the inventors Camillo-Castillo, Renata ( Essex Junction, VT ); Jain, Vibhor ( Essex Junction, VT ...
 4 Traders2 weeks ago NEC : Researchers Submit Patent Application, "Transmitter and Transmitting Method", for Approval  4 Traders3 weeks ago "Power Semiconductor Device and Method for Producing a Power Semiconductor Device" in Patent Application Approval Process  4 Traders1 week ago Intermolecular : Patent Issued for Method for Forming Metal Oxides and Silicides in a Memory Device  4 Traders1 week ago
Military Aerospace Electronics

POWER DEVICES: IGBT power electronics modules for high-power industrial applications

International Rectifier (IR) in El Segundo, Calif., is introducing a family of insulated-gate bipolar transistor modules for high-power applications including motor drive inverters, switch mode power supplies, uninterruptible power supplies, solar ...
 Military Aerospace Electronics1 month ago A new module platform for high-power semiconductors  Dataweek1 week ago IR Intros IRHLUB7970Z4/IRHLUB770Z4 RAD-Hard MOSFETs  Power Pulse.Net1 month ago Pushing the power limits: Fuji Electric on the new requirements of power electronics  Charged Electric Vehicle2 months ago

Three stage Wi-Fi 5-GHz power amplifier

The RFPA5522 is manufactured on an advanced InGaP heterojunction bipolar transistor (HBT) process and is capable of achieving linear powers up to 23 dBm with an EVM <1.8% while maintaining excellent power added efficiency. The device is provided in ...
 Microwave Engineering Online3 weeks ago

Tiny Transistors Reduce Footprint by 40%

Diodes Incorporated has introduced the world's first DFN0606-packaged NPN and PNP devices. Occupying a board space of only 0.36mm2, the transistors are 40% smaller than the directly competing DFN1006 (SOT883) parts and deliver the same or better ...
 Power Electronics News3 weeks ago Transistor with Dual Series Switching Diodes Occupies Less Space  Noodls2 months ago Diodes : Transistor with Dual Series Switching Diodes Occupies Less Space  4 Traders2 months ago

Alstom XTrapolis Mega Suburban Train

Produced by Alstom Transport, X'trapolis is a high-capacity train specifically designed for suburban and regional transport. X'trapolis Mega is a metric gauge variant of the X'trapolis. X'trapolis runs at a speed of 120km/h, and can be upgraded to ...
 Railway-technology.com3 weeks ago

Mitsubishi develops new J-Series transfer molded power semiconductor module

Mitsubishi Electric Corporation has developed a new J-Series transfer molded power semiconductor module, or T-PM, for motor drive applications in electric and hybrid vehicles. Samples of the J-Series T-PM extra compact type will be released starting ...
 Individual.com1 month ago
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