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About 598 results for "bipolar transistor"

Electric circuit compensates for thermal distortion in HBT transistor
Electronics Engineering Herald

Electric circuit compensates for thermal distortion in HBT tra...

Date: 04/01/2015 The performance of Hetero junction bipolar transistors made up of compound semiconductor material are prone to variations in temperature, which create distortion in the circuit made out of such devices. The researchers Ishikawa ... Electronics Engineering Herald, 3 weeks ago

1 images for "bipolar transistor"

Electronics Engineering Herald, 3 weeks ago

Vishay Introduces Trench IGBT

Vishay Intertechnology has introduced its new Trench IGBT (Insulated Gate Bipolar Transistor) platform featuring Punch Through (PT) and Field Stop (FS) technologies. According to a release from the company, the Vishay Semiconductors devices, ...
 Individual.com1 month ago Vishay Trench PT and FS IGBT platform increases efficiency in motor drives  Electropages.com1 month ago Trench PT and FS IGBTs lower conduction, switching losses  EDN Asia1 month ago Vishay Intertechnology Trench PT and FS IGBT Platform Reduces Conduction and Switching Losses for High Efficiency  Market Pulse Navigator1 month ago

Source Guide: Discrete Semiconductors 2015

The power semiconductors refers to bipolar junction transistors, insulated-gate bipolar transistors, IGBTs, gate-turn-off thyristors, and silicon-controlled rectifiers and thetransistors/diodes section includes distinct circuit components such as ...
 Electronic Products2 days ago Global and Chinese Insulated Gate Bipolar Transistor (IGBT) Industry 2019 Forecasts Analysis  Individual.com1 month ago Global Insulated Gate Bipolar Transistor Industry 2014 Market Trend, Size, Share, Growth and Forecast  Digital Journal2 months ago

Tiny Transistors from Diodes Incorporated Reduce Footprint by 40%

PLANO, Texas--(EON: Enhanced Online News Diodes Incorporated's initial DFN0606 bipolar transistor offerings are two NPN and PNP devices handling a power dissipation performance as high as 830mW. The 40V-rated MMBT3904FZ and MMBT3906FZ ...
 EON: Enhanced Online News1 month ago Diodes Inc. World's first DFN0606-packaged NPN / PNP transistors reduce footprint by 40%  Electropages.com1 month ago Tiny Transistors From Diodes ...  EFYTimes.com1 month ago DIODES : Tiny Transistors from Diodes Incorporated Reduce Footprint by 40%  4 Traders1 month ago

Friday Quiz: Bipolar Transistors

Remember basic transistor physics? Let's see if you really do. I've often railed on these pages about how the de-emphasis of basic engineering fundamentals such as physics, including semiconductor physics, has damaged undergraduate EE students.
 EE Times2 months ago
EE Times Europe

New LinkSwitch-4 Switcher ICs from Power Integrations Pass US DoE-6 and European CoC Efficiency Rules

Adaptive base and emitter switched drive technology enables safe use of low-cost bipolar junction transistor switches SAN JOSE, Calif.--(BUSINESS WIRE)-- Power Integrations (Nasdaq: POWI ), the leader in high-voltage integrated circuits for ...
 CNBC3 days ago POWER INTEGRATIONS : New LinkSwitch-4 Switcher ICs from Power Integrations Pass US DoE-6 and European CoC Efficiency Rules  4 Traders3 days ago Off-line switcher ICs meet 2016 European and US efficiency rules  EE Times Europe4 hours ago Switcher ICs support latest efficiency rules from DoE, CoC  EDN Asia2 days ago

Focus on Energy Efficiency to Steer IGBT and Super Junction MOSFET Market to US$10,100.0 Million by 2019: Transparency Market Research

By 2019, the insulated gate bipolar transistor (IGBT) and super junction metal-oxide semiconductor field effect transistor (MOSFET) market will be worth US$10,100.0 million, a latest report by Transparency Market Research says.
 Street Sweeper1 month ago
Instrumentation Systems and Automation Society

Researchers Submit Patent Application, "Bipolar Junction Transistor with Multiple Emitter Fingers", for Approval

By a News Reporter-Staff News Editor at Electronics Newsweekly -- From Washington, D.C. , VerticalNews journalists report that a patent application by the inventors Camillo-Castillo, Renata ( Essex Junction, VT ); Harame, David L. ( Essex Junction, ...
 4 Traders1 week ago UNITED MICROELECTRONICS : Patent Issued for Transistor with Non-Uniform Stress Layer with Stress Concentrated Regions  4 Traders3 days ago Business Machines : Patent Issued for Bipolar Transistor Frequency Doublers at Millimeter-Wave Frequencies  4 Traders3 weeks ago BUSINESS MACHINES : Patent Application Titled "Lateral Bipolar Transistors Having Partially-Depleted Intrinsic Base" Published Online  4 Traders1 month ago
Military Aerospace Electronics

IGBT power electronics modules introduced by IR for high-power industrial applications

International Rectifier (IR) in El Segundo, Calif., is introducing a family of insulated-gate bipolar transistor (IGBT) modules for high-power industrial applications including motor drive inverters, switch mode power supplies (SMPS), ...
 Military Aerospace Electronics2 months ago Gen8 IGBT family delivers efficiency and ruggedness (18/11/2014)  Electronic Product Design2 months ago IR introduces Gen8 1200V IGBT technology platform  Individual.com2 months ago 1.2kV IGBT platform minimises power dissipation  EDN Asia2 months ago
Spectrum Online

Flexible AC Transmission: The FACTS Machine

COMPANY TO WATCH: Cree, Durham, N.C. Efficient, high-temperature silicon carbide switches could slash power losses from silicon-based FACTS controllers by more than 50 percent. Cree leads a US $3.7 million project with the U.S. government's ...
 Spectrum Online1 week ago
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