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About 368 results for "bipolar transistor"

Energy-saving power products from STMicroelectronics boosts efficiency, safety, and reliability
Windpower Engineering Development

Energy-saving power products from STMicroelectronics boosts ef...

The new HB series of Insulated-Gate Bipolar Transistors (IGBTs) from STMicroelectronics have up to 40% lower turn-off energy losses than competing high-frequency devices, while reducing conduction losses by up to 30%. The HB series is in mass ... Windpower Engineering Development, 1 week ago
High-Efficiency IGBTs Feature 650-V Extended Rating Electronic Design, 2 weeks ago

21 images for bipolar transistor

Electronic Design, 2 weeks ago
EE Times France, 2 weeks ago
EDN Europe, 2 weeks ago
Low-Power Design, 2 weeks ago
EDN Europe, 1 month ago
Scoop Asia, 1 month ago
Electronics Components World, 1 month ago
New Electronics, 1 month ago
EDN Europe, 1 month ago
4 Traders, 2 months ago

NXP Introduces Industry's First Bipolar Transistors In LFPAK56 (Power SO-8)

New portfolio of automotive-qualified transistors offers DPAK-like thermal and electrical performance on just half the footprint Eindhoven, Netherlands and Hamburg, Germany (PRWEB) - NXP Semiconductors N.V. (NASDAQ: NXPI), today introduced the ...
 Electronics Web1 month ago NXP Semiconductors introduces new LFPAK56 bipolar transistors  Individual.com1 month ago

MEDIATEK : Patent Issued for Lateral Bipolar Junction Transistor

By a News Reporter-Staff News Editor at Electronics Newsweekly -- A patent by the inventors Ko, Ching-Chung (Hsinchu County, TW); Lee, Tung-Hsing (Taipei County, TW), filed on February 20, 2009 , was published online on March 18, 2014 , according to ...
 4 Traders3 weeks ago Researchers Submit Patent Application, "Trench Metal Oxide Semiconductor Field Effect Transistor with Embedded Schottky Rectifier Using Reduced Masks...  HispanicBusiness.com2 weeks ago TEXAS INSTRUMENTS : Patent Application Titled "Esd Protection Device with Improved Bipolar Gain Using Cutout in the Body Well" Published Online  4 Traders1 month ago Intermolecular Inc : Patent Issued for Bipolar Multistate Nonvolatile Memory  4 Traders1 month ago
New Electronics

IGBT targets soft switching applications

28 February 2014 A 1400V Trench Insulated Gate Bipolar Transistor (IGBT), optimised for soft switching applications, has been launched by International Rectifier. Co-packaged with an ultra-low forward voltage diode, the IRG7PK35UD1PbF ...
 New Electronics1 month ago Shrinking the core  Transmission & Distribution World1 week ago 650V IGBTs claim Near-Perfect Turn-off Efficiency for Extra Design Margin  Power Pulse.Net2 weeks ago TowerJazz Announces 700V 8" 0.18um Power Platform  Power Pulse.Net1 month ago
EDN Europe

Power SO-8 package cuts PCB area for 60/100V bipolar transistors

 EDN Europe1 month ago
Electronic Weekly

Researchers design and build fastest silicon chip

Electrical engineers at Georgia Institute of Technology have determined a transistor designed and built at IHP-Innovations for High Performance Microelectronics in Germany is the fastest silicon-based transistor chip. The silicon-germanium device ...
 Machine Design1 month ago SiGe transistor hits 800GHz  Electronic Weekly1 month ago Silicon-Germanium Chip Sets New Speed Record  Innovations Report1 month ago Silicon-germanium chip breaks speed record  Electronic Products1 month ago

Basics of MOSFETS and IGBTS for Motor Control

New Field-effect transistors and motor-control circuits offer better motor control Today's motors are increasingly driven via electronic controls, which offer better control of speed, position, and torque, as well as much greater efficiency, ...
 Electronic Products1 week ago

Exelis : Sources Sought Notice - 58-- AN/MPN-14K Precision Approach Radar (PAR) Transmitter Components

Notice Type: Sources Sought Notice Posted Date: 28-MAR-14 Office Address: Department of the Army ; Army Contracting Command; ACC-APG - Tobyhanna ; ATTN: AMSEL-TY-KO, 11 Hap Arnold Boulevard , Tobyhanna, PA 18466-5100 Subject: 58-- ...
 4 Traders2 weeks ago

Tiny transistors for extreme environs

University of Utah electrical engineers fabricated the smallest plasma transistors that can withstand high temperatures and ionizing radiation found in a nuclear reactor. Such transistors someday might enable smartphones that take and collect ...
 Brightsurf Science News3 weeks ago

RS Ultra low-saturation transistor for high-efficiency low-voltage switching applications

- Semiconductors [More Semiconductors Articles] Now available from RS Components, the new Xetex ZXT12N50DXTA dual 50V npn bipolar transistor is a 4th-generation ultra low-saturation device that utilises a proprietary Zetex matrix structure ...
 Electropages.com1 month ago
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