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About 522 results for "bipolar transistor"

base station amplifiers, bipolar transistor, attenuators, digi...

Phoenix Microwave Corp. was formed to service the growing needs of the RF/microwave designer by offering high performance components and sub-assemblies utilizing the latest available technology. Phoenix Microwave Corp. is a major component ... Wireless Design Online, 1 month ago

21 images for bipolar transistor

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Charged Electric Vehicle, 2 months ago
EDN Asia, 4 months ago
VAR India

ST targets Electric Vehicles with SiC power devices

Today's power modules typically rely on standard silicon diodes and Insulated Gate Bipolar Transistors (IGBTs). Silicon carbide is a newer, wide-bandgap technology that allows smaller device geometries capable of operating well above the 400V range ...
 EE Times Europe2 months ago SiC-based power modules streamline car electrification  EE Times India2 months ago ST Reveals SiC Devices For Automotive Electrification  Auto Tech Review2 months ago STMicroelectronics reveals advanced silicon-carbide power devices to accelerate automotive electrification  Display Plus2 months ago
International Business Times

World IGBT Market - Opportunities and Forecasts, 2014 - 2022

Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device that can also be used as an electronic switch, a characteristics similar to MOSFETs. Global power transistor market industry was valued at $13.1 billion in 2011. IGBT is cost ...
 Research and Markets2 weeks ago United States Gate Bipolar Transistors (IGBT) STATCOM Industry 2016: Market New Research Report  Before It's News2 weeks ago Gate Bipolar Transistors (IGBT) STATCOM Consumption Global Market Research Report 2016  MRO-Esource.com2 weeks ago Global Insulated Gate Bipolar Transistor(IGBT) Market Capacity, Production, Revenue and Growth Rate (2011-2021)  MyNewsDesk1 month ago

STATCOM UPS Market - Product, Application, Geography. & Forecast Report - 2024

STATCOM UPS Market, By Product (Gate Turn-Off Thyristors (GTO) STATCOM and Insulated Gate Bipolar Transistors (IGBT) STATCOM), By Application (Long Distance Power Transmission, Power Substations, Oil & Gas, Steel Manufacturing, Mining and Automobile ...
 MyNewsDesk1 month ago STATCOM UPS Market to Account for US$113.9 mn in Revenue by 2024; India Industry Analysis, Size, Share, Growth Trends, and Forecast 2016 - 2024: TMR  IT News Online1 month ago Regenerative Uninterruptible Power Supply (UPS) Market to Reach US$163.11 mn by 2024 - India Industry Analysis, Size, Share, Growth Trends, and Forecast 2016 - 2024  AndhraNews.net1 month ago STATCOM UPS Market Segment Forecasts Up to 2024, Research Reports: TMR  Digital Journal2 months ago

Texas Instruments : Patent Issued for Bipolar Transistor Including Lateral Suppression Diode (USPTO 9373615)

By a News Reporter-Staff News Editor at Electronics Newsweekly -- According to news reporting originating from Alexandria, Virginia, by VerticalNews journalists, a patent by the inventor Edwards, Henry Litzmann (Garland, TX), filed on November 3, ...
 4 Traders3 weeks ago AMS : Patent Issued for Transistor Assembly as an ESD Protection Measure (USPTO 9373614)  4 Traders3 weeks ago "Semiconductor Devices with Structures for Suppression of Parasitic Bipolar Effect in Stacked Nanosheet Fets and Methods of Fabricating the Same" in...  Equities.com1 month ago Patent Application Titled "Trans-Impedance Amplifier with Replica Gain Control" Published Online (USPTO 20160149548)  Equities.com1 month ago
Broadway World

Patent Issued for Charge Sensors Using Inverted Lateral Bipolar Junction Transistors (USPTO 9377543)

By a News Reporter-Staff News Editor at -- GLOBALFOUNDRIES INC. ( Grand Cayman, KY) has been issued patent number 9377543, according to news reporting originating out of Alexandria, Virginia, by VerticalNews editors. The patent's inventors are ...
 Equities.com2 weeks ago Researchers Submit Patent Application, "Semiconductor Device with Transistor Cells and Enhancement Cells", for Approval (USPTO 20160190123)  Equities.com1 week ago Patent Application Titled "Temperature Sensor Circuit and Integrated Circuit" Published Online (USPTO 20160187901)  4 Traders1 week ago "Latchup Reduction by Grown Orthogonal Substrates" in Patent Application Approval Process (USPTO 20160190237)  Equities.com1 week ago

Bipolar Junction Transistors in Two-Dimensional WSe2 with Large Current and Photocurrent Gains

Nano Letters
 Nano Letters1 month ago

Do Really IGBT's are Taking on Super Junction MOSFET ?

Albany, United States, June 08,2016/ -- Insulated gate bipolar transistors (IGBTs) and super junction metal oxide field effect transistors (MOSFETs) are widely used as switches in a variety of power electronics systems, ...
 Free Press Release1 month ago

Patent Issued for Self-Aligned Bipolar Junction Transistors (USPTO 9349845)

By a News Reporter-Staff News Editor at -- From Alexandria, Virginia, VerticalNews journalists report that a patent by the inventors Harame, David L. ( Essex Junction, VT); Liu, Qizhi ( Lexington, MA), filed on September 24, 2014 , was published ...
 Equities.com1 month ago Patent Issued for Metal Detector with at Least One Transmit/Receive Switch (USPTO 9348053)  Equities.com1 month ago
Power ElectronicTips

Littelfuse demonstrates SiC and IGBT roadmap

The IGBTs combine MOSFET gate drive with high current and low saturation voltage switching capability of bipolar transistors, for high efficiency and fast switching, says the company. Covering 600, 1,200 and 1,700V, the WB series, D series and S ...
 Electronic Specifier2 months ago 1.2-kV IGBTs boast super-low switching losses  Power ElectronicTips2 months ago ON Semiconductor further extends IGBT offerings with Ultra Field Stop trench technology  Design World Online2 months ago
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